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| inchange semiconductor product specification silicon npn darlington power transistors 2SD2560 description ? with to-3pn package ? complement to type 2sb1647 applications ? audio ,regulator and general purpose pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta= ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 150 v v ceo collector-emitter voltage open base 150 v v ebo emitter-base voltage open collector 5 v i c collector current 15 a i b base current 1 a p c collector power dissipation t c =25 ?? 130 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-3pn) and symbol
inchange semiconductor product specification 2 silicon npn darlington power transistors 2SD2560 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =30ma ;i b =0 150 v v cesat collector-emitter saturation voltage i c =10a ;i b =10ma 2.5 v v besat base-emitter saturation voltage i c =10a ;i b =10ma 3.0 v i cbo collector cut-off current v cb =150v ;i e =0 100 | a i ebo emitter cut-off current v eb =5v; i c =0 100 | a h fe dc current gain i c =10a ; v ce =4v 5000 c ob output capacitance i e =0 ; v cb =10v;f=1mhz 120 pf f t transition frequency i c =2a ; v ce =12v 70 mhz switching times t on turn-on time 0.8 | s t s storage time 4.0 | s t f fall time i c =10a;r l =4 |? i b1 =-i b2 =10ma v cc =40v 1.2 | s ? h fe classifications o p y 5000-12000 6500-20000 15000-30000 inchange semiconductor product specification 3 silicon npn darlington power transistors 2SD2560 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.1mm) |
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